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Fasmicro Google Android Market – Are Nigerians Doing This, Fake Credit Cards?

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Hello People,

 

We write to suggest to the person that has started this unbecoming attitude of shopping at our store with credit/debit cards that cannot be validated. If you are a Nigerian, you are part of the reason oogle continues to restrict most of  the things Nigerians can do with their products. Get a life people and stop embarrassing Nigeria. We have no evidence it is a Nigerian, but we are sure he/she knows Nigeria to care about the Constitution of the land.

 

Please get a good credit card and shop right.

 

Fasmicro Apps Team

 

 


Hello Fasmicro ,

Google order # 915992059074836 has been cancelled because your buyer failed to provide a valid credit card number that passed authorization successfully. The buyer’s credit card was never charged for this order and we’ve sent email to your buyer regarding the cancelled status of the order. Learn more.

 

 Order date: Jul 11, 2011 3:53 AM EDT
Google order number: 915992059074836 – Fasmicro Order #12999763169054705758.05164831090871417795.1310370817
 Shipping Status  Qty Item   Price
  Digital delivery  1 Nigerian Constitution  –  The full and unedited 1999 constitution of the federal republic of Nigeria. $0.99
Tax (OH) : $0.00
Total : $0.99
Order cancelled

Africa Could Benefit By Tapping The Skills Of The Diaspora – Technology Is Available To Bridge Any Gap

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Brain drain is ravaging Africa. Most of the skilled and talented citizens are leaving the continent to Western Europe and North America. While some are going to play sports, many have made these regions homes and ply their trades in some of the most critical sectors of our modern civilization. And they are not coming back.

 

A recent study on Nigerian healthcare industry shows that the nation is underserved by its medical personnel primarily because of the emigration of its physicians abroad. So while there are many medical schools graduating thousands of doctors, the nation consistently lose the bests of these experts yearly. Unfortunately, the story is the same across all parts of sub-Sahara Africa and this has become a continental tragedy.

 

African football (yes soccer) leagues have been destroyed by the movement of our talented players to Europe. Local games are poorly attended and not very exciting to the locals. African European players are disproportionally popular and richer than their counterparts that play in Africa. In most national teams, up to 90% of the players play international.

 

In the field of engineering, most of the best students are lured by scholarships for postgraduate studies in the United States. These students are supposed to be future technical leaders of the continent. Upon graduation, they are enticed by the good jobs and prospects abroad and they spend their working lives outside Africa.

 

Emigration of skilled workers from developing nations to developed ones in search of better opportunities in trade, education, work, etc has been well documented. Many scholars from World Bank, IMF to countless non-governmental organizations have examined this trend. Theoretical examination is not scarce; what is lacking is solution to this problem.

 

So what can the continent do? Simply, we can leverage the power of technology to mitigate the impacts of brain drain. There are many enabling technologies and strategies which Africa and indeed all developing nations experiencing brain drain can deploy to turn brain drain into brain gain. There is need to understand how these nations can develop infrastructures to connect and collaborate with these people in Diaspora for their national developments. And technology could be the solution.

 

Understandably, Africa will prefer the physical presence of these experts in their native nations. Unfortunately, some of them work in industries that have not diffused in Africa. For those that are experts in genetic engineering, robotics, and so on, they may discover limited opportunities at home. Also, there is a potential “degradation” that occurs when someone moves from the seat of ideas to stay at the corners. In other words, telling an MIT professor of microelectronics to move to Kenya and practice will mean that in five years, he could be exceedingly backward when compared to his peers in US. And his professional worth will degrade instead of appreciating.

 

So, the continent must follow a paradigm where they honor the need for these experts to stay abroad and potentially contribute to their native nations. The physical presence while helpful is not really necessary provided there are enabling technologies and policies that can foster interactions between them and these nations.

 

The challenge will be to understand how technology can narrow the brain drain problem and turn them into brain gain as these experts continue to develop their skills in developed nations and using the enabling tools share and interact with their partners in their respective native nations. We need technology strategies that can connect people across boundaries and help modernize national programs on health, education, research, training, etc.

 

A comprehensive research on the contemporary issues regarding enabling technologies and strategies that can turn brain drain into brain gain is urgently needed in Africa. Based on the outcome of the study, we must develop a continental level roadmap driven by technology to offset the knowledge-imbalance created by brain drain. The continent needs to understand the following areas:

 

  • 21st Century Brain Drain Challenges
  • Brain drain and globalization
  • Evolution and Opportunities in Brain Drain
  • Distance and Web-based Education
  • Technologies for Telemedicine, Security and Technology Management
  • Deployment of Telepresence technologies in developing nations
  • Economics of Brain Drain, National Technology Infrastructures and Policies
  • Designing and deployment of supportive technologies
  • Legal and Taxation issues for intercontinental workforce
  • Open source Technologies
  • ICT technologies
  • Distance research and education collaboration
  • Networks and regional bodies’ roles in standardizations, and others

Africa must work hard and invest resources to see how it can use technology to improve the quality of its education and healthcare through tele-education and telemedicine.  That will require looking at the communication facilities available in the continent and upgrading them accordingly. African Union should think about mandating member states to have Diaspora Technology Networks across the regions so that constant flow of information and ideas could be shared through quality networks, Telepresence and other video technologies. The universities must be anchors of this initiative as they are the most vital instrument for technology diffusion.

 

We must find ways to tap the expertise of our citizens in foreign countries.  It is time we begin looking at the technology of this process than focusing on the academic aspects of it. As technologies break boundaries, we must take advantages and build Africa.

 

In summary, the exodus of very capable Africans to North America and Europe owing to lack of institutional readiness at home must be seen as a threat to the prosperity and wealth of Africa. As they work in these adopted nations to improve their education, medicine, sports, and all other major fields, African governments must find ways to tap these skills. Technologies are readily available and we have the capability to turn this brain drain into brain gain. It is about developing and deploying the right technology with the goal of not asking these Diasporas to return to Africa but to remain in their adopted nations and support their native ones in education and training.

Microchip Unveils Advanced Development Kit For High-Quality Digital Audio Applications

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Microchip Technology Inc., a leading provider of microcontroller, analog and Flash-IP solutions, today announced a 32-bit microcontroller (MCU)-based development kit for the creation of high-quality, 24-bit audio applications.  The Audio Development Board for PIC32 MCUs features an 80 MIPS PIC32 MCU, a 24-bit Wolfson audio codec, a two-inch color LCD Display, a USB interface, and an onboard microphone.  Supported by Microchip’s free software libraries, the kit provides a perfect solution for the development of speech and audio recording and playback products.  Target applications include docks for portable audio players, home-entertainment systems and automotive sound systems.

 

 

The 80-MIPS PIC32MX795F512L MCU on the audio development board features 512 KB Flash and 128 KB RAM, providing plenty of processing power and memory to decode, analyze and play back audio and speech.  Libraries are available for speech recording and playback, as well as MP3 music decoding applications.  Additionally, an audio Sample Rate Conversion (SRC) library for33 kHz, 44.1 kHz and 48 kHz is also supported, which enables developers to reduce component costs for playback solutions.  There are also libraries available for managing the USB interface and driving the on-board color LCD display, which features 16-bit color images.  For those developers who are enrolled in the Apple®  Made For iPod (MFi) Licensing Program, the kit also interfaces to Microchip’s accessory development platform for iPod® and iPhone®.

 

 

“The Audio Development Board for PIC32 MCUs offers a complete platform that doesn’t break the budget for high-quality audio development,” said Sumit Mitra, vice president of Microchip’s High-Performance Microcontroller Division.  “The board also includes an interface for use with our accessory development platform for iPod and iPhone, enabling expansion to support these popular devices.”

 

Sources of Leakage Currents in Nanometer CMOS

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There are five major sources of leakage currents in CMOS transistors, they are:

  • Gate oxide tunnelling leakage (IG)
  • Subthreshold leakage (ISUB)
  • Reverse-bias junction leakages (IREV)
  • Gate Induced Drain Leakage (IGIDL)
  • Gate current due to hot-carrier injection (IH)

 

Gate oxide tunnelling leakage

The downscaling of the gate oxide thickness increases the field oxide across the gate resulting to electron tunnelling from gate to substrate or from substrate to gate. The resulting current is called gate oxide tunnelling current and it is the major leakage current in the nanometer CMOS. Two mechanisms are responsible for this phenomenon. The first is called Fowler-Nordheim (FN) tunnelling mechanism, which is electron tunnelling into the conduction band of the oxide layer.  The other mechanism, direct tunnelling, is more dominant than the FN.  In this case, electron tunnel directly to the gate through the forbidden energy gap of the silicon dioxide layer.  The resulting current is called the gate direct-tunnelling leakage and it flows from the gate through the oxide insulation to the substrate.

 

Subthreshold leakage

The subthreshold leakage is the drain-source current of a transistor during operation in weak inversion (where transistors switch ON though the gate source voltage is below the threshold voltage, the voltage at which when exceeded the transistor is expected to be turned ON). Unlike the strong inversion region in which the drift current dominates, the subthreshold conduction is due to the diffusion current of the minority carriers in the channel for a metal oxide semiconductor (MOS) device. The magnitude of the subthreshold current is a function of the temperature, supply voltage, device size, and the process parameters.

 

Reverse-bias source/drain junction leakages

Though the p-n junctions between the source/drain and the substrate are reverse-biased, yet a small amount of current flows causing these junctions to leak. This current is called reverse biased junction leakage current. The magnitude of this current depends on the area of the source/drain diffusion and the current density, which is in turn determined by the doping concentration. The highly doped shallow junctions and halo doping necessary to control short channel effects (SCE) in the nanometer devices has escalated this leakage current. Under this situation, electrons tunnel across the p-n junction causing junction leakage.

 

Gate Induced Drain Leakage (GIDL)

This leakage current is caused by high electric field effect in the drain junction of MOS transistors. Over the years, transistor scaling has led to increasingly steep halo implants, where the substrate doping at the junction interfaces is increased, while the channel doping is low. Its purpose is to control punch-through and drain-induced barrier lowering with minimal impact on the mobility of the carrier in the channel. The steep doping profile that results at the drain edge increases the band-to-band tunnelling currents there, especially as drain-bulk voltage (Vdb) is increased. Thinner oxide and higher supply voltage increase GIDL current. Controlling the doping concentration in the drain of the transistor is the best way to control GIDL.

 

Gate current due to hot-carrier injection (IH)

This leakage current is due to drift over time of the threshold voltage in short channel devices. The high electric field near the Si-SiO2 interface can cause electrons or holes to gain sufficient energy to overcome the interface potential and enter into the oxide layer. In this phenomenon known as hot carrier effect, the electron injection is more likely to occur than the hole as electron has both lower effective mass and barrier height than hole. These carriers trapped in the oxide layer change the threshold voltage of the device and consequently the subthreshold current. Proportionate scaling down of the supply voltage with the device dimension is one possible way of controlling this leakage.

The World In 2050, South Africa Loses The “S” In BRICs Nations

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We have a new report from United Nations, Goldman Sachs, and World Bank estimating the top 10 economies by GDP in 2050, the population and global spread of wealth. We will focus on the top 10 economies data.

 

The numbers in billions of US dollars are as follows:

 

China $70,710

USA $38,514

India $37,668

Brazil $11,366

Mexico $9,340

Russia $8,580

Indonesia $7,010

Japan $6,677

UK $ 5,133

Germany $5,024

 

Please note that Japan will be displaced from the present 3rd position to 8th. US loses the top position badly with China nearly doubling the US GDP. The most interesting is that Germany loses to UK. Germany is Europe’s top economy today. Why is that going to happen? No clues.

 

But the main point here is that South Africa does not make it. All the BRICs nations (Brazil, Russia, India and China) make it. South Africa has been advertising that they are the “s” in the BRICS is nowhere. We wish that promotion translates to real impacts on people’s lives.

 

Of course, everything here is an estimate. Last 25 years, no one mentioned China. But today, they dominate the world. We could be surprised that Nigeria can sneak in. It is all about execution and vision and it can happen.